Title :
Low-temperature deposition of a polycrystalline Si film on yttria-stabilized zirconia seed layer
Author :
Herman, Sukreen Hana ; Horita, Susumu
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
We have proposed a method to grow a polycrystalline silicon (poly-Si) film on quartz substrate at low-temperature (<;450°C) by using a polycrystalline yttria-stabilized zirconia (poly-YSZ) film as a seed layer. It was found out that the crystallization of the Si film strongly depended on the surface treatment of the YSZ seed layer. We obtained the crystallized Si film by direct deposition on the HF-treated YSZ layer rinsed with ethanol at a temperature as low as 400°C, but that on the YSZ layer rinsed with deionized water (DIW) was amorphous.
Keywords :
coating techniques; crystallisation; semiconductor thin films; silicon; surface treatment; yttrium compounds; zirconium compounds; Si; crystallization; deionized water; ethanol; low-temperature deposition; poly-Si film; poly-YSZ film; polycrystalline silicon film; quartz substrate; temperature 400 C; yttria-stabilized zirconia seed layer; Chemicals; Crystallization; Ethanol; Glass; Materials science and technology; Semiconductor films; Substrates; Surface treatment; Temperature; Thin film transistors; Polycrystalline Si; direct deposition; seed layer;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503084
