Title :
MOSFET prediction in space environments taking into account high frequency switched bias response
Author :
Shvetzov-Shilovsky, Ivan N. ; Pershenkov, Viacheslav S. ; Belyakov, Vladimir V. ; Zebrev, Guennady I. ; Bashin, Arkady Y. ; Ivashin, Dmitry V.
Author_Institution :
Dept. of Microelectron., Moscow State Eng. Phys. Inst., Russia
Abstract :
The buildup of interface states and oxide trapped charges were investigated in MOSFETs with ac gate voltage. It is found that the time characteristics of transistor switching influence the rate of threshold voltage component shift. This result is discussed and included into model used for MOSFET prediction in space environments.
Keywords :
MOSFET; electron traps; hole traps; interface states; radiation effects; semiconductor device measurement; semiconductor device models; MOSFET; high frequency switched bias response; interface states; oxide trapped charges; radiation-induced interface traps; space environments; time characteristics; transistor switching; Annealing; Circuit testing; Frequency; Interface states; Laboratories; MOSFET circuits; Performance evaluation; Predictive models; Switching circuits; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159268
