Title :
Band structures and optical gain of direct-bandgap tensile strained Ge/Ge1-X-YSiXSnY type I quantum wells
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The band structures and optical gain of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves of 80 Å/200 Å Ge/GeSiSn QWs are calculated. We find that optical gain will crease and the peak position will decrease when increasing Sn composition.
Keywords :
Ge-Si alloys; III-V semiconductors; photonic band gap; quantum wells; tin; Ge-GeSiSn; band structures; direct-bandgap tensile strainedquantum wells; hole energy dispersion curves; optical gain; Germanium alloys; Interpolation; Laser theory; Optical devices; Optical materials; Photonic band gap; Power engineering and energy; Quantum well lasers; Silicon; Tin; Ge; Si; band structure; k.p method; optical gain; quantum well;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503089
