DocumentCode
2919192
Title
Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)
Author
McMorrow, Dale ; Boos, J. Brad ; Park, Doe ; Buchner, Stephen ; Knudson, Alvin R. ; Melinger, Joseph S.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
132
Lastpage
137
Abstract
Time resolved charge-collection measurements are performed on InAlAs/InGaAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET technology.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device measurement; HEMTs; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; InP-based high electron mobility transistors; charge-collection dynamics; charge-enhancement processes; device bias conditions; incident laser pulse energy; pulsed laser excitation; time resolved charge-collection measurements; Current measurement; Energy measurement; Energy resolution; HEMTs; Indium compounds; MODFETs; Optical pulses; Performance evaluation; Pulse measurements; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159270
Filename
1159270
Link To Document