Title :
MTSCStack: An effective technique to decrease leakage power in VLSI circuits
Author :
Karimi, Gh ; Alimoradi, A.
Author_Institution :
Electr. Eng. Dept., Razi Univ., Kermanshah, Iran
Abstract :
The demands of future computing have led to challenges of very deep submicron (DSM) regime. As a result, leakage power dissipation is rapidly becoming a substantial contributor to the total power dissipation as threshold voltage becomes small, according to the International Technology Roadmap for Semiconductors (ITRS). In this paper a new low leakage power technique, named “MTSCStack” has been proposed. The proposed method is based on reducing leakage power in active mode and standby mode while saving exact logic state during sleep mode. Library designed using 65 nm BSIM 4 model of Berkeley Predictive Technology Model (BPTM) has been used to simulate proposed technique.
Keywords :
VLSI; low-power electronics; BSIM 4 model; Berkeley Predictive Technology Model; ITRS; International Technology Roadmap for Semiconductors; MTSCStack; VLSI circuits; leakage power dissipation; leakage power reduction; size 65 nm; threshold voltage; very deep submicron regime; Circuits; Dynamic voltage scaling; Energy consumption; Logic; MOSFETs; Power dissipation; Predictive models; Subthreshold current; Threshold voltage; Very large scale integration; DSM; ITRS;
Conference_Titel :
Electronic Devices, Systems and Applications (ICEDSA), 2010 Intl Conf on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-6629-0
DOI :
10.1109/ICEDSA.2010.5503090