• DocumentCode
    2919335
  • Title

    A large range and fine tuning configurable Bandgap reference dedicated to wafer-scale systems

  • Author

    Laflamme-Mayer, Nicolas ; Blaquiére, Yves ; Sawan, Mohamad

  • Author_Institution
    Ecole Polytech. Montreal, Montréal, QC, Canada
  • fYear
    2011
  • fDate
    11-14 Dec. 2011
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    A compact configurable voltage reference in a 180 nm CMOS technology dedicated to a wafer-scale prototyping platform for electronic systems is described. The proposed topology is based on a PTAT current generator mixed with CTAT nMOS diode connected transistors to achieve temperature and power supply independency. This new Bandgap reference (BGR) uses a configurable unbalanced differential pair to achieve an output voltage that ranges from 1.33 to 3.04 V. This large voltage range can be fine tuned with a ~10 mV step for a total of 246 unique output values. Existing configurable BGRs either have a fine grain tuning over a very small range of outputs or a wide range of outputs with coarse tuning. The temperature dependency is less than 27 mV over 60°C with a power supply sensitivity of 17.8 mV/V. The proposed design achieves the best Figure Of Merit and is compared with other similar available implementations for a configurable BGR.
  • Keywords
    CMOS integrated circuits; MOSFET; network topology; semiconductor diodes; wafer-scale integration; BGR; CMOS technology; CTAT nMOS diode connected transistor; PTAT current generator; compact configurable voltage reference; configurable unbalanced differential pair; electronic system; figure of merit; fine tuning configurable bandgap reference; power supply sensitivity; voltage 1.33 V to 3.04 V; wafer-scale prototyping platform; Equations; Mathematical model; Photonic band gap; Power supplies; Temperature sensors; Transistors; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
  • Conference_Location
    Beirut
  • Print_ISBN
    978-1-4577-1845-8
  • Electronic_ISBN
    978-1-4577-1844-1
  • Type

    conf

  • DOI
    10.1109/ICECS.2011.6122205
  • Filename
    6122205