DocumentCode
2919411
Title
Analysis of total dose tolerance of LOCOS isolated MOSFET by 2D self consistent simulations
Author
Torres, A. ; Flament, O.
Author_Institution
DAM Ile-de-France, CEA, Bruyeres-le-Chatel, France
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
223
Lastpage
228
Abstract
The total dose tolerance of parasitic LOCOS field transistors is analyzed using 2D self consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.
Keywords
MOSFET; SCF calculations; oxidation; radiation hardening (electronics); semiconductor device models; 2D self consistent simulations; LOCOS isolated MOSFET; ionizing effects; isolation; process parameters; substrate doping level; total dose tolerance; Analytical models; CMOS technology; Doping; Electron traps; Implants; Ionizing radiation; Leakage current; MOSFET circuits; Threshold voltage; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159284
Filename
1159284
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