Photorefractive multiple quantum well devices at 1064 nm

Author

Iwamoto, S. ; Kageshima, H. ; Taketomi, S. ; Nishioka, M. ; Someya, T. ; Arakawa, Y. ; Fukutani, K. ; Shimura, T. ; Kuroda, K.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

106

Lastpage

107

Abstract

Summary form only given.Summary from only given. Photorefractive multiple quantum wells (MQWs) have been applied to the ultrasound detection, the depth-resolved image recognition through turbid media, and so on. The fabrication of photorefractive MQW devices at 1064 nm and its applications to proposed measurement systems are very attractive and interesting. Furthermore, the realization of these devices may create the new area of applications of photorefractive MQWs. Here, we report on the fabrication of photorefractive InGaAs-GaAs MQWs and its performance at the wavelength of 1064 nm.

Keywords

III-V semiconductors; gallium arsenide; image recognition; indium compounds; optical fabrication; photorefractive materials; quantum well devices; ultrasonic measurement; 1064 nm; InGaAs-GaAs; depth-resolved image recognition; measurement systems; photorefractive InGaAs-GaAs MQWs; photorefractive MQW devices; photorefractive multiple quantum well devices; turbid media; ultrasound detection; Frequency conversion; Gallium arsenide; Image storage; Nonlinear optics; Optical buffering; Optical mixing; Optical saturation; Photorefractive effect; Quantum well devices; Ultrasonic imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906784

Filename

906784