DocumentCode
2919616
Title
Single-chip pressure sensor radiation hardness research
Author
Artamonov, A.S. ; Boychenko, D.V. ; Nikiforov, A.Y. ; Sogoyan, A.V. ; Shelepin, N.A. ; Telets, V.A. ; Tverskoy, M.G.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
296
Lastpage
299
Abstract
Transient and steady-state radiation response of a single-chip pressure sensor is investigated in (1...6) atm pressure range. The independence of radiation behavior on the applied pressure was observed. The sensor sensitivity variation is less than 0.01 % for total dose up to 3 Mrd. A model for dose rate effects is developed.
Keywords
X-ray effects; intelligent sensors; neutron effects; pressure sensors; radiation hardening (electronics); 1 to 6 atm; 3 Mrad; dose rate effects; sensor sensitivity variation; single-chip pressure sensor radiation hardness research; steady-state radiation response; transient radiation response; Bridge circuits; Mechanical sensors; Microelectronics; Military standards; Power supplies; Sensor phenomena and characterization; Temperature distribution; Temperature sensors; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159297
Filename
1159297
Link To Document