DocumentCode :
2919783
Title :
Implications of advanced microelectronics technologies for heavy ion single event effect (SEE) testing
Author :
Poivey, Christian ; Barth, Janet A. ; Reed, Robert ; Stassinopoulos, Epaminondas G. ; LaBel, Kenneth A. ; Xapsos, Michael
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
fYear :
2001
fDate :
10-14 Sept. 2001
Firstpage :
328
Lastpage :
331
Abstract :
The complexity of SEE testing for space applications, has increased over the years. This trend has been mainly driven by advances in integrated circuit technologies. This paper reviews how the test environment relates to the real space environment. It shows that medium energy beams (25 to 200 MeV/amu) are more and more necessary for SEE testing of state-of-the-art microcircuits.
Keywords :
ion beam effects; space vehicle electronics; SEE testing; advanced microelectronics technologies; heavy ion single event effect testing; medium energy ion beams; real space environment; space applications; state-of-the-art microcircuits; test environment; Circuit testing; Helium; Integrated circuit technology; Ionization; Materials testing; Microelectronics; NASA; Silicon; Space technology; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
Type :
conf
DOI :
10.1109/RADECS.2001.1159302
Filename :
1159302
Link To Document :
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