DocumentCode :
2919805
Title :
Low Threshold Current Density Operation of GaInAsP/InP DFB Lasers Consisting of Quantum-Wire Active Regions
Author :
Yagi, Hideki ; Miura, Koji ; Nishimoto, Yoshifumi ; Plumwongrot, Dhanorm ; Maruyama, Takeo ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan; CREST, Japan Science and Technology Agency Phone. +81-3-5734-2512 Fax. +81-3-5734-2907
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
61
Lastpage :
62
Abstract :
GaInAsP/InP distributed feedback lasers with quantum-wire active regions (30 nm wide) were realized by dry etching and regrowth method. A2 threshold current density as low as 176 A/cm2(Ith= 2.1 mA) was successfully achieved under the RT-CW condition.
Keywords :
Distributed feedback devices; Dry etching; Indium phosphide; Laser feedback; Laser theory; Lithography; Optical device fabrication; Scanning electron microscopy; Semiconductor lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569350
Filename :
1569350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2919805
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