Title :
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers
Author :
Ohta, M. ; Furuhata, T. ; Matsuura, T. ; Matsui, Y. ; Miyamoto, T. ; Koyama, F.
Author_Institution :
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, JAPAN mota@ms.pi.titech.ac.jp
Abstract :
Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.
Keywords :
Energy states; Gallium arsenide; Guidelines; Hot carriers; Quantum well lasers; Resonant tunneling devices; Semiconductor lasers; Temperature; Threshold current; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569351
