DocumentCode
2919912
Title
Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs
Author
Inguimbert, C. ; Duzellier, S. ; Ecoffet, R.
Author_Institution
ONERA-DESP, Toulouse, France
fYear
2001
fDate
10-14 Sept. 2001
Firstpage
373
Lastpage
379
Abstract
This paper deals with the use of short range beams in order to measure the sensitive thickness of devices. In the case of a Hitachi 4-Mbit SRAM, σ(E) measurements have been compared to GEANT 4 calculations, taking into account the effects of the overlayers. The analysis of the experimental data at two bias levels has pointed out that σ(E) is directly correlated with the energy deposited in SV for low ranges, on the other hand charge collection mechanisms have a strong impact for longer ranges.
Keywords
SRAM chips; ion beam effects; 4 Mbit; GEANT 4 calculations; GEANT4; SRAM; charge collection mechanisms; device sensitive thickness; heavy ion sensitivity; high-integrated RAMs; sensitive volume determination; Computer aided software engineering; Deconvolution; Extraterrestrial measurements; Modems; Orbital calculations; Postal services; Probes; Process design; Random access memory; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN
0-7803-7313-8
Type
conf
DOI
10.1109/RADECS.2001.1159309
Filename
1159309
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