DocumentCode :
2919955
Title :
Activation of CNT nano-to-micro contact via electrical breakdown
Author :
Jiang, Y. ; Zhang, M.Q.H. ; Kawano, T. ; Cho, C.Y. ; Lin, L.
Author_Institution :
Univ. of California at Berkeley, Berkeley
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
725
Lastpage :
728
Abstract :
The "healing" of nano-to-micro electrical contact between a single carbon nanotube (CNT) and silicon micro structure has been demonstrated using the technique of electrical breakdown. Experimental results show that the resistance of an in-situ synthesized CNT was "healed" from an original value of infinite to 7 MOmega. The experimental breakdown voltage is 10 V and the electrical field is estimated as 5times107 V/cm for a 2 nm-thick native oxide layer, which is consistent with the analytical breakdown value. This process helps improving the resistance of nano-to-micro contacts and increase device yield by activating seemingly non-functional CNTs in nano electromechanical systems (NEMS).
Keywords :
carbon nanotubes; electric breakdown; electrical contacts; micromechanical devices; silicon; C; CNT nano-to-micro contact; NEMS; carbon nanotube; electrical breakdown; nano electromechanical systems; silicon micro structure; size 2 nm; voltage 10 V; Assembly; Carbon nanotubes; Contact resistance; Electric breakdown; Electric resistance; Electrodes; Mechanical sensors; Micromechanical devices; Sensor phenomena and characterization; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443759
Filename :
4443759
Link To Document :
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