Activation of CNT nano-to-micro contact via electrical breakdown

Author

Jiang, Y. ; Zhang, M.Q.H. ; Kawano, T. ; Cho, C.Y. ; Lin, L.

Author_Institution

Univ. of California at Berkeley, Berkeley

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

725

Lastpage

728

Abstract

The "healing" of nano-to-micro electrical contact between a single carbon nanotube (CNT) and silicon micro structure has been demonstrated using the technique of electrical breakdown. Experimental results show that the resistance of an in-situ synthesized CNT was "healed" from an original value of infinite to 7 MOmega. The experimental breakdown voltage is 10 V and the electrical field is estimated as 5times10⁷ V/cm for a 2 nm-thick native oxide layer, which is consistent with the analytical breakdown value. This process helps improving the resistance of nano-to-micro contacts and increase device yield by activating seemingly non-functional CNTs in nano electromechanical systems (NEMS).

Keywords

carbon nanotubes; electric breakdown; electrical contacts; micromechanical devices; silicon; C; CNT nano-to-micro contact; NEMS; carbon nanotube; electrical breakdown; nano electromechanical systems; silicon micro structure; size 2 nm; voltage 10 V; Assembly; Carbon nanotubes; Contact resistance; Electric breakdown; Electric resistance; Electrodes; Mechanical sensors; Micromechanical devices; Sensor phenomena and characterization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443759

Filename

4443759