Effect of amplifier parameters on single-event transients in an inverting operational amplifier

Author

Sternberg, A.L. ; Massengill, L.W. ; Schrimpf, R.D. ; Boulghassoul, Y. ; Barnaby, H.J. ; Buchner, S. ; Pease, R.L. ; Howard, J.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2001

fDate

10-14 Sept. 2001

Firstpage

398

Lastpage

404

Abstract

Laser data and simulation tools are combined to investigate the single-event transient response of the LM124 operational amplifier. The effect of the bandwidth and gain on transients originating in different stages in the operational amplifier is studied. We found that the single-event transient response of the LM124 operational amplifier in an inverting configuration was dependent on the bandwidth of the amplifier, the gain, and on the values of the resistors used to program the gain of the amplifier. We show the results of simulations which illustrate how these changes impact the single-event transient response of the amplifier. An analysis of the results suggests which properties of an operational amplifier will provide a better single-event transient response.

Keywords

integrated circuit modelling; integrated circuit testing; ion beam effects; operational amplifiers; radiation hardening (electronics); LM124 operational amplifier; amplifier parameters; bandwidth; gain; inverting operational amplifier; laser data; laser simulation tools; single-event transients; Analog integrated circuits; Bandwidth; Circuit simulation; Operational amplifiers; Power amplifiers; Resistors; Semiconductor lasers; Testing; Transient response; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on

Print_ISBN

0-7803-7313-8

Type

conf

DOI

10.1109/RADECS.2001.1159313

Filename

1159313