Comparison on the performance of the confined-chacogenide with thin metal interlayer and optimised lateral phase change memories

Author

Sainon, Santipab ; Harnsoongnoen, Sanchai ; Sa-ngiamsak, Chiranut

Author_Institution

Dept. of Electr. Eng., Khon Kaen Univ., Khon Kaen, Thailand

fYear

2011

fDate

11-14 Dec. 2011

Firstpage

176

Lastpage

179

Abstract

This work, for the first time, presents the performance comparison between the lately proposed vertical confined-chacogenide phase change memory with thin metal interlayer (CCTMI) and a newly proposed optimised lateral (LP) phase change random access memory structure with a 180nm feature size. High programming current has been a critical challenge to realize a high-density. Comparison of its performance aimed on the programming power during the reset state of both technologies was carefully analysed and simulated by 3-D Finite Element Method. The results revealed that the newly proposed LP cell with optimised structure can generate heat 52% more effective than that of CCTMI.

Keywords

chalcogenide glasses; finite element analysis; phase change memories; 3D finite element method; high programming current; optimised lateral phase change memories; random access memory structure; thin metal interlayer; vertical confined-chalcogenide phase change memory; Heating; Materials; Metals; Phase change random access memory; Programming; Temperature distribution; Confined-chacogenide phase change memory with thin metal interlayer; Lateral; Phase change random access memory; Reset Current; phase change memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4577-1845-8

Electronic_ISBN

978-1-4577-1844-1

Type

conf

DOI

10.1109/ICECS.2011.6122242

Filename

6122242