DocumentCode :
2920166
Title :
On the design of balanced carbon nanotube field-effect transistor gates
Author :
Dev, Kapil ; Massoud, Yehia
Author_Institution :
ECE Dept., Rice Univ., Houston, TX, USA
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
204
Lastpage :
207
Abstract :
In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage.
Keywords :
carbon nanotube field effect transistors; invertors; logic gates; C; CNTFET devices; asymmetric voltage transfer characteristic; balanced carbon nanotube; balanced inverter circuit; carbon nanotube field-effect transistors; field effect transistor gates; logic gates; unoptimized device parameter; CNTFETs; Carbon nanotubes; Inductance; Integrated circuit modeling; Inverters; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
Type :
conf
DOI :
10.1109/ICECS.2011.6122249
Filename :
6122249
Link To Document :
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