DocumentCode :
2920186
Title :
Characterization of power transistors and low voltage logic circuits at high dose and temperature
Author :
Le Gac, J.-P. ; Giraud, A. ; Brichard, B. ; Brisset, C. ; Picard, C.
Author_Institution :
CEA Saclay, Gif sur Yvette, France
fYear :
2001
fDate :
10-14 Sept. 2001
Firstpage :
455
Lastpage :
460
Abstract :
Controlled thermonuclear fusion environments require electronic systems that can withstand both high radiation doses and elevated temperatures. This study investigates the response of power transistors and low voltage logic circuits to these two constraints.
Keywords :
logic circuits; low-power electronics; power MOSFET; radiation effects; CMOS inverter circuits; controlled thermonuclear fusion environment; high dose effects; high temperature effects; low voltage logic circuits; power MOSFETs; power transistors; Circuit testing; Electronic components; Electronic equipment testing; Fusion reactors; Inductors; Logic circuits; Low voltage; Phase measurement; Power transistors; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
Type :
conf
DOI :
10.1109/RADECS.2001.1159322
Filename :
1159322
Link To Document :
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