Title :
PSP based DCG-FGT transistor model including characterization procedure
Author :
Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.
Author_Institution :
ST-Microelectron., Rousset, France
Abstract :
A new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The PSP MOS description is used as a basis for the formulation of the conduction channel behavior. The floating gate potential is implicitly computed with an added charge neutrality relation that ensures a good convergence. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics technology. The final objective of this work is to provide an accurate and scalable model available in design framework.
Keywords :
semiconductor device models; transistors; DCG-FGT; ICCAP software; PSP MOS; STMicroelectronics; dual-control-gate floating-gate transistor; electrical simulator; static simulations; transient simulations; transistor model; Computational modeling; Electric potential; Integrated circuit modeling; Logic gates; Mathematical model; Threshold voltage; Transistors;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
DOI :
10.1109/ICECS.2011.6122255
