A near-infrared photon-counting system using an InGaAs avalanche photodiode

Author

Maruyama, Tetsuhiro ; Narusawa, F. ; Kudo, Motoi ; Tanaka, Mitsuru ; Saito, Yuya ; Yoshida, Takafumi ; Nomura, Akihiro

Author_Institution

R&D Office, Hioki E.E. Corp., Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

138

Lastpage

139

Abstract

Summary form only given. The necessity of photon-counting systems in the near-infrared region has been increasing in every field of physics, chemistry, and life sciences. Because of the potential attributes of high quantum efficiency in that region, an avalanche photodiode (APD) would be a candidate device to meet this demand. We present the characteristics of the photon-counting system developed using an InGaAs APD and its application to lidar observations and chemiluminescence detection.

Keywords

III-V semiconductors; avalanche photodiodes; chemiluminescence; gallium arsenide; indium compounds; infrared detectors; optical radar; photodetectors; photon counting; InGaAs; InGaAs avalanche photodiode; avalanche photodiode; candidate device; chemiluminescence detection; chemistry; high quantum efficiency; lidar observations; life sciences; near-infrared photon-counting system; near-infrared region; photon-counting system; photon-counting systems; physics; Avalanche photodiodes; Detectors; Fluorescence; Gunshot detection systems; Indium gallium arsenide; Photomultipliers; Power lasers; Power measurement; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906827

Filename

906827