An X-Band SiGe driver amplifier

Author

Terlemez, Hasip ; Palamutcuogullari, O.

Author_Institution

Mikroelektron. R&D Ltd., Istanbul Tech. Univ., Istanbul, Turkey

fYear

2013

fDate

28-30 Nov. 2013

Firstpage

341

Lastpage

343

Abstract

In this paper, an integrated driver amplifier operating at X-Band (7-10 GHz) frequencies is presented. This driver amplifier is implemented in a 0.25-μm SiGe BiCMOS process. The two-stage push-pull amplifier uses on-chip transformers for the purpose of single-ended to differential signal conversion as well as input and output impedance matching. Operating with a 3.3 V supply voltage, the amplifier exhibits a measured output power of 13 dBm at 1-dB compression point with power-added efficiency of 12% and small signal gain of 21 dB.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; differential amplifiers; impedance matching; microwave amplifiers; microwave integrated circuits; transformers; BiCMOS process; SiGe; X-band driver amplifier; efficiency 12 percent; frequency 7 GHz to 10 GHz; gain 21 dB; input impedance matching; on-chip transformers; output impedance matching; single-ended to differential signal conversion; size 0.25 mum; two-stage push-pull amplifier; voltage 3.3 V; BiCMOS integrated circuits; Impedance matching; Power amplifiers; Power generation; Power transformer insulation; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineering (ELECO), 2013 8th International Conference on

Conference_Location

Bursa

Print_ISBN

978-605-01-0504-9

Type

conf

DOI

10.1109/ELECO.2013.6713857

Filename

6713857