DocumentCode :
2920311
Title :
Gold-indium Transient Liquid Phase (TLP) wafer bonding for MEMS vacuum packaging
Author :
Welch, Warren C., III ; Najafi, Khalil
Author_Institution :
Univ. of Michigan, Ann Arbor
fYear :
2008
fDate :
13-17 Jan. 2008
Firstpage :
806
Lastpage :
809
Abstract :
This paper reports the first wafer-level vacuum packages created with gold-indium transient liquid phase (TLP) wafer bonding. The packages were bonded at 200degC for 1 hour under a vacuum environment in a commercially available wafer bonder. After bonding, the integrated getters were activated for 1 hour resulting in internal pressures as low as 200 mTorr. The pressures have been stable for over 6 months as measured by integrated Pirani gauges. Although no leak rate trend has been observed, the worst case leak rate that fits within the error of the pressure measurement is 16 mTorr/year (1ldr10-16 atm.cc.s-1).
Keywords :
gold; indium; micromechanical devices; pressure measurement; vacuum techniques; wafer bonding; wafer level packaging; gold-indium transient liquid phase; integrated Pirani gauges; integrated getters; pressure measurement; temperature 200 C; time 1 hr; wafer bonding; wafer-level MEMS vacuum packages; Hermetic seals; Intermetallic; Isothermal processes; Micromechanical devices; Packaging; Resonance; Temperature sensors; Thermal conductivity; Wafer bonding; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on
Conference_Location :
Tucson, AZ
ISSN :
1084-6999
Print_ISBN :
978-1-4244-1792-6
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2008.4443779
Filename :
4443779
Link To Document :
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