Title :
The influence of dose rate on total dose radiation effects on MOSFETs
Author :
Sharp, R.E. ; Pater, S.L.
Author_Institution :
AEA Technol., Didcot, UK
Abstract :
P- and n-channel, medium power MOSFETs have been radiation tested at three widely differing dose rates in order to improve our understanding of the reliability of accelerated testing for these devices. Recent data have indicated that the very low dose rates found in space can lead to more damage than is observed at higher dose rates. The results of the current work show that no difference is observed between the effects caused by the dose rates used here for these devices.
Keywords :
MOSFET; radiation effects; space vehicle electronics; MOSFETs; accelerated testing reliability; dose rate influence; space radiation environment; total dose radiation effects; Aerospace testing; Circuit testing; Life estimation; MOSFETs; Manufacturing; Plastic packaging; Radiation effects; Rectifiers; Semiconductor device packaging; System testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2001. 6th European Conference on
Print_ISBN :
0-7803-7313-8
DOI :
10.1109/RADECS.2001.1159328
