Title :
Fully integrated 5.6–6.4 GHz power amplifier using transformer combining
Author :
Gruner, Daniel ; Boeck, Georg
Author_Institution :
Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany
Abstract :
A fully integrated 5.6-6.4 GHz power amplifier is implemented in a 0.25 mum SiGe-HBT technology using an on-chip transformer combining structure. The novel combiner topology combines the output power of two push pull pairs and leads to a reduced transistor size compared to a conventional combiner while enhancing the efficiency and maintaining the maximum output power. Electromagnetic modeling of the whole chip layout has been carried out to optimize the performance of the presented circuit. At 6 GHz and a supply voltage of 1.2/1.8 V the single-stage power amplifier achieves a measured output power of 18/21 dBm at 1 dB power compression and 21/24 dBm in saturation region. The maximum power added efficiency is 24.7%. A small signal gain of 12 dB was observed at the center frequency of 6 GHz.
Keywords :
Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; differential amplifiers; power combiners; transformers; SiGe; SiGe-HBT technology; combiner topology; efficiency 24.7 percent; electromagnetic modeling; frequency 5.6 GHz to 6.4 GHz; fully integrated power amplifier; gain 12 dB; on-chip transformer combining structure; output power; power added efficiency; power compression; push pull pairs; reduced transistor size; single-stage power amplifier; size 0.25 mum; voltage 1.2 V; voltage 1.8 V; Circuit faults; Circuit topology; Electromagnetic measurements; Electromagnetic modeling; Gain; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; Voltage;
Conference_Titel :
Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Conference_Location :
Cork
Print_ISBN :
978-1-4244-3733-7
Electronic_ISBN :
978-1-4244-3734-4
DOI :
10.1109/RME.2009.5201289
