Title :
GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm
Author :
Lott, J.A. ; Kovsh, A.R. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
Air Force Institute of Technology, Ohio, USA
Abstract :
The first near 1300 nm electrically-injected vertical cavity surface emitting lasers containing sheets of self-assembled InAs/InGaAs quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated.
Keywords :
Gallium arsenide; Indium gallium arsenide; Microcavities; Power generation; Power lasers; Quantum dot lasers; Surface emitting lasers; Surface waves; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569382
