Title :
The dynamically light-induced low-reflectivity state in gallium
Author :
Bratfalean, R.T. ; Dhanjal, S. ; Zheludev, N. ; Petropoulos, P. ; Richardson, D.J. ; Emelyanov, V.I.
Author_Institution :
Dept. of Phys. & Astron., Southampton Univ., UK
Abstract :
Summary form only given. Confined elemental gallium has recently attracted much attention because of its unique nonlinear optical properties on the verge of a structural phase transition. We report, for the first time, a light-induced state of the gallium-silica interface with specular reflectivity as low as 6%. The low-reflectivity state can be induced at light power levels starting around one milliwatt, and only within a narrow, less than one degree Celsius, temperature interval, below the bulk melting point of gallium.
Keywords :
gallium; light reflection; nonlinear optics; reflectivity; Ga; Ga-SiO/sub 2/; Ga-SiO/sub 2/ interface; bulk melting point; dynamically light-induced low-reflectivity state; light power levels; light-induced state; low-reflectivity state; nonlinear optical properties; specular reflectivity; structural phase transition; temperature interval; Fiber nonlinear optics; Gallium; Large Hadron Collider; Nonlinear optics; Optical films; Paints; Reflectivity; Silicon compounds; Temperature; Tin;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906837
