The dynamically light-induced low-reflectivity state in gallium

Author

Bratfalean, R.T. ; Dhanjal, S. ; Zheludev, N. ; Petropoulos, P. ; Richardson, D.J. ; Emelyanov, V.I.

Author_Institution

Dept. of Phys. & Astron., Southampton Univ., UK

fYear

2000

fDate

7-12 May 2000

Firstpage

146

Lastpage

147

Abstract

Summary form only given. Confined elemental gallium has recently attracted much attention because of its unique nonlinear optical properties on the verge of a structural phase transition. We report, for the first time, a light-induced state of the gallium-silica interface with specular reflectivity as low as 6%. The low-reflectivity state can be induced at light power levels starting around one milliwatt, and only within a narrow, less than one degree Celsius, temperature interval, below the bulk melting point of gallium.

Keywords

gallium; light reflection; nonlinear optics; reflectivity; Ga; Ga-SiO/sub 2/; Ga-SiO/sub 2/ interface; bulk melting point; dynamically light-induced low-reflectivity state; light power levels; light-induced state; low-reflectivity state; nonlinear optical properties; specular reflectivity; structural phase transition; temperature interval; Fiber nonlinear optics; Gallium; Large Hadron Collider; Nonlinear optics; Optical films; Paints; Reflectivity; Silicon compounds; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.906837

Filename

906837