FTIR investigations on X-N bonds of annealed PolySi/NIDOS films

The paper presents Fourier transform infrared spectroscopy investigations on composition bonds of polysilicon/Nitrogen Doped Silicon PolySi/NIDOS film deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are annealed at 700°C for different duration from 15 min to 480 min. The FTIR results indicate the presence Si-N, BN and B-N-B bonds located at different wavenumber. The decomposition results show the existence of more complex c-BN and h-BN peaks. In addition, The FTIR spectra of polySi/NIDOS films annealed at different durations are used to calculate bond densities of Si-N, B-N-B, h-BN and c-BN. Moreover, after 60 min the films are dense by c-BN and h-BN complexes. The strong concentration of these complexes keeps the boron penetration in dioxide layer which improve MOSFET component.