Title :
Mid-infrared (3.3-3.9 /spl mu/m) lasers and light-emitting diodes with type-II "W" InAs(P,Sb)/InAsSb active regions
Author :
Stein, Aaron ; Behres, A. ; Kluth, J. ; Heime, K. ; Christol, P. ; Skouri, E.M. ; Wilk, A. ; Joulie, A.
Author_Institution :
Inst. fur Halbleitertech., Tech. Hochschule Aachen, Germany
Abstract :
Summary form only given. Mid-infrared (λ=3-5 μm) lasers with InAsSb-containing double heterostructure or multiquantum well (MQW) active regions show high output power and low threshold current densities but are limited to temperatures lower than 220 K due to leakage current and Auger recombination. Recently, electrically pumped type-II "W" laser diodes exhibited operation near room temperature. The objective of this study was the fabrication of InAsPSb/InAsSb/InAsP MQW-LEDs and lasers with type-II "W" design and with the highest emission intensities at 3.3-3.9-μm wavelength.
Keywords :
Auger effect; III-V semiconductors; current density; electron-hole recombination; indium compounds; laser beams; light emitting diodes; optical fabrication; quantum well devices; quantum well lasers; semiconductor heterojunctions; semiconductor lasers; 220 K; 3.3 to 3.9 mum; 3.5 mum; Auger recombination; InAs(P,Sb)/InAsSb active regions; InAsPSb-InAsSb; InAsPSb-InAsSb-InAsP; InAsPSb/InAsSb/InAsP; InAsSb-containing double heterostructure active region; InAsSb-containing multiquantum well active regions; MQW-LEDs; electrically pumped type-II W laser diodes; emission intensities; fabrication; leakage current; light-emitting diodes; mid-infrared lasers; operation; output power; room temperature; threshold current densities; type-II W active regions; type-II W design; Diode lasers; Laser excitation; Leakage current; Light emitting diodes; Power generation; Power lasers; Pump lasers; Quantum well devices; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906861