Title :
A novel LV LP CMOS internal topology of CCII+ and its application in current-mode integrated circuits
Author :
Di Carlo, C. ; De Marcellis, A. ; Stornelli, V. ; Ferri, G. ; Tiberio, D.
Author_Institution :
Electr. & Inf. Eng. Dept., Univ. of L´´Aquila, L´´Aquila, Italy
Abstract :
In this paper we present a novel internal architecture of low-voltage and low-power positive second-generation current conveyor (CCII+). The proposed internal circuit topology, designed in standard CMOS technology (AMS 0.35 ¿m), employs an n-type differential pair as input stage, while a cascoded push-pull configuration implements a very high impedance output stage. A degenerated nMOS common drain topology reduces X node impedance. The choice of internal CCII+ architecture, concerning both its stage architecture and transistor sizes, has been made in the direction of designing a quasi-ideal CCII+ in terms of parasitic components at its terminals. The developed CCII+ operates at low supply voltages of ±1 V with a total power consumption of about 300 ¿W, so it is suitable for general purpose portable applications. It has been also characterized implementing well-known applications, both in time and frequency domains, such as signal processing circuits and impedance simulators.
Keywords :
CMOS integrated circuits; current conveyors; signal processing; transistors; LV LP CMOS internal topology; X node impedance; current-mode integrated circuits; impedance simulators; low power positive CCII+; low voltage CCII+; push-pull configuration; second-generation current conveyor; signal processing circuits; size 0.35 mum; transistor sizes; voltage 1 V to -1 V; w-type differential pair; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Circuit topology; Energy consumption; Frequency domain analysis; Impedance; Integrated circuit technology; Low voltage; MOS devices;
Conference_Titel :
Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Conference_Location :
Cork
Print_ISBN :
978-1-4244-3733-7
Electronic_ISBN :
978-1-4244-3734-4
DOI :
10.1109/RME.2009.5201310