DocumentCode :
2920954
Title :
The effect of redundancy on mismatch-induced offset and random noise in a dynamic comparator
Author :
Bichan, Mike ; Carusone, Anthony Chan
Author_Institution :
Univ. of Toronto, Toronto, ON, Canada
fYear :
2009
fDate :
12-17 July 2009
Firstpage :
180
Lastpage :
183
Abstract :
We present an analysis of offset voltage and noise in a dynamic comparator. To limit the offset and noise to acceptable levels, a single comparator must be sized quite large. We show that better use can be made of this die area by dividing it into an array of redundant comparators from which the lowest-offset device is chosen. Monte Carlo simulations with a 45 nm CMOS process confirm that the input-offset standard deviation can be reduced arbitrarily in the absence of noise. As the area is divided into a greater number of smaller comparators, random noise overtakes offset as the factor limiting the sensitivity. The competing effects of offset and noise combine to give an optimum number of comparators that maximizes sensitivity for a given total area.
Keywords :
CMOS integrated circuits; Monte Carlo methods; comparators (circuits); random noise; CMOS process; Monte Carlo simulations; dynamic comparator; input-offset standard deviation; mismatch-induced offset; offset voltage; random noise; size 45 nm; Analog-digital conversion; CMOS process; Circuits; Communication channels; Digital communication; Educational institutions; Noise level; Noise reduction; Signal analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research in Microelectronics and Electronics, 2009. PRIME 2009. Ph.D.
Conference_Location :
Cork
Print_ISBN :
978-1-4244-3733-7
Electronic_ISBN :
978-1-4244-3734-4
Type :
conf
DOI :
10.1109/RME.2009.5201314
Filename :
5201314
Link To Document :
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