DocumentCode
2920989
Title
Size dependence of single-mode power for mode-stabilized oxide confined VCSELs
Author
Martinsson, H. ; Vukusic, J.A. ; Larsson, A.
Author_Institution
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2000
fDate
7-12 May 2000
Firstpage
169
Abstract
Summary form only given. The oxide-confined vertical-cavity surface-emitting laser (VCSEL) is an attractive light source due to low threshold current, and high conversion efficiency. In this paper we have investigated the dependence of the achievable fundamental mode power on the surface relief diameter for oxide-confined VCSELs emitting at 850 nm with oxide apertures of 9 and 12 /spl mu/m. The ring shaped surface relief increases the mirror loss in the etched areas thereby suppressing higher order transverse modes. The relief is fabricated using electron beam lithography and reactive ion beam etching. With an etch depth of 80 nm the mirror loss increases tenfold in the etched areas.
Keywords
electron beam lithography; laser mirrors; laser modes; laser stability; optical fabrication; oxidation; semiconductor lasers; sputter etching; surface emitting lasers; electron beam lithography; etch depth; etched areas; fundamental mode power; high conversion efficiency; higher order transverse modes; low threshold current; mirror loss; mode-stabilized oxide confined VCSELs; oxide apertures; oxide-confined VCSELs; reactive ion beam etching; ring shaped surface relief; single-mode power; size dependence; surface relief diameter; Apertures; Electron beams; Etching; Laser modes; Light sources; Lithography; Mirrors; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.906869
Filename
906869
Link To Document