DocumentCode
2921006
Title
Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
Author
Juodawlkis, P.W. ; O´Donnell, Frederick J. ; Hargreaves, J.J. ; Oakley, D.C. ; Napoleone, A. ; Groves, S.H. ; Mahoney, L.J. ; Molvar, K.M. ; Missaggia, L.J. ; Donnelly, J.P. ; Williamson, R.C. ; Twichell, J.C.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
2
fYear
2002
fDate
10-14 Nov. 2002
Firstpage
426
Abstract
The agreement between the measured nonlinear response and the absorption saturation simulation for different absorber thickness provides strong evidence of an absorption-saturation photodiode nonlinearity. We have improved the linearity of a photonic ADC by developing large-area, thick photodiodes.
Keywords
III-V semiconductors; analogue-digital conversion; gallium arsenide; indium compounds; infrared detectors; optical saturable absorption; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP p-i-n photodiodes; absorber thickness; absorption saturation nonlinearity; large-area thick photodiodes; nonlinear response; photonic ADC linearity; Absorption; Charge carrier density; Indium gallium arsenide; Indium phosphide; Optical attenuators; Optical pulse generation; Optical pulses; Optical saturation; PIN photodiodes; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1159361
Filename
1159361
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