Title :
Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
Author :
Juodawlkis, P.W. ; O´Donnell, Frederick J. ; Hargreaves, J.J. ; Oakley, D.C. ; Napoleone, A. ; Groves, S.H. ; Mahoney, L.J. ; Molvar, K.M. ; Missaggia, L.J. ; Donnelly, J.P. ; Williamson, R.C. ; Twichell, J.C.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
The agreement between the measured nonlinear response and the absorption saturation simulation for different absorber thickness provides strong evidence of an absorption-saturation photodiode nonlinearity. We have improved the linearity of a photonic ADC by developing large-area, thick photodiodes.
Keywords :
III-V semiconductors; analogue-digital conversion; gallium arsenide; indium compounds; infrared detectors; optical saturable absorption; p-i-n photodiodes; photodetectors; InGaAs-InP; InGaAs/InP p-i-n photodiodes; absorber thickness; absorption saturation nonlinearity; large-area thick photodiodes; nonlinear response; photonic ADC linearity; Absorption; Charge carrier density; Indium gallium arsenide; Indium phosphide; Optical attenuators; Optical pulse generation; Optical pulses; Optical saturation; PIN photodiodes; Pulse measurements;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159361
