DocumentCode :
2921036
Title :
A 500 nA quiescent, 100 mA maximum load CMOS low-dropout regulator
Author :
Hu, John ; Hu, Brian ; Fan, Yanli ; Ismail, Mohammed
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear :
2011
fDate :
11-14 Dec. 2011
Firstpage :
386
Lastpage :
389
Abstract :
Ultra low quiescent, wide output current range low-dropout regulators (LDO) are in high demand in portable applications to extend battery lives. This paper presents a 500 nA quiescent, 0 to 100 mA load, 3.5-7 V input to 3 V output LDO in a digital 0.35 μm 2P3M CMOS technology. The challenges in designing with nano-ampere of quiescent current are discussed, namely the leakage, the parasitics, and the excessive DC gain. CMOS super source follower voltage buffer and input excessive gain reduction are then proposed. The LDO is internally compensated using Ahuja method with a minimum phase margin of 55° across all load conditions. The maximum transient voltage variation is less than 150 and 75 mV when used with 1 and 10 μF external capacitor. Compared with existing work, this LDO achieves the best transient flgure-of-merit with close to best dynamic current efficiency (maximum-to-quiescent current ratio).
Keywords :
CMOS integrated circuits; low-power electronics; voltage regulators; CMOS low-dropout regulator; CMOS technology; current 100 mA; current 500 nA; gain reduction; maximum transient voltage variation; quiescent current; size 0.35 mum; source follower voltage buffer; voltage 3.5 V to 7 V; CMOS integrated circuits; CMOS technology; Impedance; Regulators; Stability analysis; Transient response; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
Type :
conf
DOI :
10.1109/ICECS.2011.6122294
Filename :
6122294
Link To Document :
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