Title :
Experimental and theoretical study of the influence of quantum barrier thickness on the carrier distribution in InGaAsP MQW lasers
Author :
Hamp, M.J. ; Cassidy, D.T.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Summary form only given.The distribution of carriers among the wells of MQW lasers can profoundly affect performance. Here we experimentally and theoretically examine the influence of barrier layer thickness on the carrier distribution.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; InGaAsP; InGaAsP MQW lasers; barrier layer thickness; carrier distribution; quantum barrier thickness; Doping; Gain measurement; Indium phosphide; Laser modes; PIN photodiodes; Quantum mechanics; Quantum well devices; Temperature dependence; Temperature measurement; Zinc;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906874
