Title :
1.5-/spl mu/m AlGaInAs quantum well lasers grown by the digital alloy technique
Author :
Newell, T.C. ; Varangis, P. ; Pease, E. ; Liu, G.T. ; Stintz, A. ; Malloy, K. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given.1.5-/spl mu/m lasers are of particular interest since this wavelength enjoys the dual role of being optimum for fiber optics and the lowest that is considered eye-safe. Our investigations are focussed on digital alloy (DA) MBE grown lattice matched and strained AlGaInAs multiquantum well lasers. The DA method reduces many growth complexities associated with quaternary materials. The AlGaInAs alloys produce a better conduction band offset than InGaAsP on InP.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; safety; 1.5 mum; AlGaInAs; AlGaInAs quantum well lasers; MBE grown; conduction band offset; digital alloy technique; eye-safe; growth complexities; lattice matched; quaternary materials; strained AlGaInAs multiquantum well lasers; Digital alloys; Doping; Gain measurement; Indium phosphide; Laser modes; Quantum well devices; Quantum well lasers; Temperature dependence; Temperature measurement; Zinc;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.906876
