Low phase-noise UHF thin-film piezoelectric-on-substrate LBAR oscillators

Author

Lavasani, H.M. ; Abdolvand, R. ; Ayazi, F.

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2008

fDate

13-17 Jan. 2008

Firstpage

1012

Lastpage

1015

Abstract

This paper reports on the first demonstration of a low phase-noise 467 MHz temperature-compensated oscillator based on a ZnO-on-nanocrystalline diamond lateral bulk acoustic resonator (LBAR). The temperature compensation is achieved by using a thin silicon-dioxide buffer layer on the surface of the diamond film. The oscillator performance is compared with an uncompensated 496 MHz AIN-on-silicon oscillator. The sustaining circuitry is comprised of a 9.4 mW tunable transimpedance amplifier (TIA) in 0.18 mum CMOS. The phase-noise is measured below -80dBc/Hz at 1kHz offset with temperature drift of < -4ppm/degC from -5degC to 90degC.

Keywords

CMOS integrated circuits; UHF amplifiers; UHF oscillators; acoustic resonators; buffer layers; bulk acoustic wave devices; nanostructured materials; phase noise; piezoelectric devices; substrates; 0.18 mum CMOS; AIN-on-silicon oscillator; LBAR oscillator; UHF thin-film piezoelectric-on-substrate; ZnO-on-nanocrystalline diamond lateral bulk acoustic resonator; frequency 1 kHz; frequency 467 MHz; frequency 496 MHz; low phase-noise; power 9.4 mW; size 0.18 mum; temperature -5 degC to 90 degC; temperature compensation; thin silicon-dioxide buffer layer; tunable transimpedance amplifier; Frequency; Impedance; Micromechanical devices; Oscillators; Phase measurement; Piezoelectric films; Rough surfaces; Substrates; Temperature; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on

Conference_Location

Tucson, AZ

ISSN

1084-6999

Print_ISBN

978-1-4244-1792-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2008.4443830

Filename

4443830