Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms

Author

Tayel, Mazhar B. ; Yassin, Amr H.

Author_Institution

Dept. of Electr. Eng., Alexandria Univ., Alexandria

fYear

2009

fDate

20-22 Feb. 2009

Firstpage

600

Lastpage

603

Abstract

A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a small-signal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-mum gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S-parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.

Keywords

S-parameters; aluminium compounds; gallium compounds; genetic algorithms; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; S-parameters; extrinsic circuit elements; frequency 0.5 GHz to 18 GHz; genetic algorithms; intrinsic circuit elements; optimization tool; parameters extraction; pseudomorphic HEMT; pseudomorphic high electron mobility transistor; size 200 mum; small-signal model; stochastic global search; Electron mobility; Equivalent circuits; Genetic algorithms; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Parameter extraction; Scattering parameters; Stochastic processes; Genetic Algorithms; PHEMT; optimization; small signal modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Computer Technology, 2009 International Conference on

Conference_Location

Macau

Print_ISBN

978-0-7695-3559-3

Type

conf

DOI

10.1109/ICECT.2009.148

Filename

4796034