Title :
Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms
Author :
Tayel, Mazhar B. ; Yassin, Amr H.
Author_Institution :
Dept. of Electr. Eng., Alexandria Univ., Alexandria
Abstract :
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a small-signal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-mum gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S-parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
Keywords :
S-parameters; aluminium compounds; gallium compounds; genetic algorithms; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; S-parameters; extrinsic circuit elements; frequency 0.5 GHz to 18 GHz; genetic algorithms; intrinsic circuit elements; optimization tool; parameters extraction; pseudomorphic HEMT; pseudomorphic high electron mobility transistor; size 200 mum; small-signal model; stochastic global search; Electron mobility; Equivalent circuits; Genetic algorithms; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Parameter extraction; Scattering parameters; Stochastic processes; Genetic Algorithms; PHEMT; optimization; small signal modeling;
Conference_Titel :
Electronic Computer Technology, 2009 International Conference on
Conference_Location :
Macau
Print_ISBN :
978-0-7695-3559-3
DOI :
10.1109/ICECT.2009.148
