DocumentCode :
2921339
Title :
Enhancement of Light-output of GaN-based Light-emitting Diodes by Bias-assisted Photoelectrochemical oxidation of p-GaN in H2O
Author :
Lai, Fang-I ; Chen, W.Y. ; Kao, C.C. ; Lin, C.F. ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan
fYear :
2005
fDate :
30-02 Aug. 2005
Firstpage :
342
Lastpage :
343
Abstract :
An enhancement of GaN-based LEDs light output using photoelectrochemical (PEC) oxidation method via H2O on the p-GaN surface was demonstrated. The output light was improved 37% after 45min PEC oxidation.
Keywords :
GaN; LED; oxidation; photoelectrochemical; Gallium nitride; Gold; Light emitting diodes; Oxidation; Photonics; Refractive index; Rough surfaces; Surface roughness; Water; Wide band gap semiconductors; GaN; LED; oxidation; photoelectrochemical;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
Type :
conf
DOI :
10.1109/CLEOPR.2005.1569441
Filename :
1569441
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2921339
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