DocumentCode
2921358
Title
Low noise Nb-SIS mixers at far above the gap frequency
Author
Gao, J.R. ; van de Stadt, H. ; Kovtonyuk, S. ; Klapwijk, Teunis M. ; de Graauw, Th.
Author_Institution
Dept. of Appl. Phys., Groningen Univ.
fYear
1996
fDate
12-15 Aug 1996
Firstpage
145
Lastpage
148
Abstract
There are great interests in developing Nb SIS mixers because of the extremely low noise temperatures and because of the need of low local oscillator (LO) power. Several groups have demonstrated experimentally that Nb SIS mixers with integrated tuning elements can perform near the quantum noise limit up to the Nb gap frequency (~700 GHz). Beyond this frequency, a major loss will take place in the tuning elements, which are Nb-SiO2-Nb micro-striplines, because the incoming photons can break the Cooper-pairs, thus increasing the surface resistance of the Nb strips. Applying highly conductive Al instead of Nb for a stripline can reduce the loss since the former has a lower surface resistance at higher frequencies. In this work, we report the fabrication of waveguide Nb SIS mixers with Al striplines and heterodyne measurement results around 1 THz
Keywords
aluminium; niobium; strip lines; submillimetre wave mixers; superconducting device noise; superconducting microwave devices; superconductor-insulator-superconductor mixers; tuning; 1 THz; 840 to 1085 GHz; Al striplines; Al-SiO2-Al; Nb; Nb gap frequency; THF; fabrication; highly conductive Al; integrated tuning elements; low LO power; low noise Nb SIS mixers; surface resistance; waveguide Nb SIS mixers; Electrical resistance measurement; Frequency; Local oscillators; Niobium; Optical device fabrication; Stripline; Strips; Surface resistance; Temperature; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3619-4
Type
conf
DOI
10.1109/ICMWFT.1996.574809
Filename
574809
Link To Document