Title :
GaN films deposited at low temperature on Al substrates by compound source molecular beam deposition for electroluminescent devices
Author :
Egawa, S. ; Honda, Taiki ; Obinata, N. ; Sugimoto, Kazuya ; Kawanishi, H.
Author_Institution :
Department of Electronic Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, JAPAN, E-mail: cm04007@ns.kogakuin.ac.jp
Abstract :
GaN-based electroluminescent devices were fabricated on aluminum substrates at the low-temperature less than 500°C. Purplish-blue emission was observed from the devices driven under pulsed voltage. The aluminum substrate is effective to realize their long lifetime.
Keywords :
Aluminum; Diode lasers; Electroluminescent devices; Gallium nitride; Glass; Insulation; Light emitting diodes; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569443
