Title :
Planar Inner Stripe Blue-violet Laser Diodes with Buried AlN Confinement Layer
Author_Institution :
System Devices Research Laboratories, NEC Corporation
Abstract :
A novel planar type blue-violet laser was fabricated using AlN as a current and an optical confinement layer. Kink-free output higher than 200 mW was demonstrated under a wide temperature range from 20°C to 90°C.
Keywords :
Aluminum gallium nitride; Amorphous materials; Diode lasers; Etching; Gallium nitride; High speed optical techniques; Optical refraction; Optical variables control; Optical waveguides; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569444
