• DocumentCode
    2921383
  • Title

    Planar Inner Stripe Blue-violet Laser Diodes with Buried AlN Confinement Layer

  • Author

    Sasaoka, C.

  • Author_Institution
    System Devices Research Laboratories, NEC Corporation
  • fYear
    2005
  • fDate
    30-02 Aug. 2005
  • Firstpage
    348
  • Lastpage
    349
  • Abstract
    A novel planar type blue-violet laser was fabricated using AlN as a current and an optical confinement layer. Kink-free output higher than 200 mW was demonstrated under a wide temperature range from 20°C to 90°C.
  • Keywords
    Aluminum gallium nitride; Amorphous materials; Diode lasers; Etching; Gallium nitride; High speed optical techniques; Optical refraction; Optical variables control; Optical waveguides; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
  • Print_ISBN
    0-7803-9242-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2005.1569444
  • Filename
    1569444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2921383