DocumentCode :
292142
Title :
Waveguide-coupled resonator filters on AlN on silicon
Author :
Cameron, T.P. ; Hunt, W.D. ; Liaw, H.M. ; Hickernel, F.S.
Volume :
1
fYear :
1994
fDate :
Oct. 31 1994-Nov. 3 1994
Firstpage :
371
Abstract :
In the effort to continually reduce the size and cost of wireless communications products the level of integration has improved dramatically in recent years. In order to reduce future generations of wireless systems to single chip form, there is a need for on-chip filtering capabilities. In this paper the first report of an experimental waveguide-coupled resonator filter for cellular radio applications is presented. Measured results indicate a typical insertion loss of 26 dB at a center frequency of 132 MHz using a 2 um AlN film on {001}<110> Si. In addition a laser probe analysis has been conducted and a theoretical analysis of the first order reflection coefficients is presented
Keywords :
aluminium compounds; surface acoustic wave resonator filters; surface acoustic wave waveguides; waveguide filters; 132 MHz; 26 dB; AlN film; AlN-Si; cellular radio; first order reflection coefficients; insertion loss; integration; laser probe analysis; on-chip filtering; silicon; single chip; waveguide-coupled resonator filters; wireless communications; Aluminum materials/devices; Surface acoustic wave resonator filters; Surface acoustic wave waveguides; Waveguide filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location :
Cannes, France
Print_ISBN :
0-7803-2012-3
Type :
conf
DOI :
10.1109/ULTSYM.1994.401612
Filename :
401612
Link To Document :
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