Title :
High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide
Author :
Chun-Hua Cai ; Ming Qin
Author_Institution :
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Abstract :
A high-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of - 70 to 40-C.
Keywords :
CMOS integrated circuits; capacitive sensors; graphene; sensitivity; silicon; temperature sensors; GO; Si; bulk silicon interdigital capacitive temperature sensor; graphene oxide; high-performance bulk silicon interdigital capacitive temperature sensor; sensing material; temperature -70 degC to 40 degC; typical CMOS integrated temperature sensors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4141
