DocumentCode
29215
Title
High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide
Author
Chun-Hua Cai ; Ming Qin
Author_Institution
Key Lab. of MEMS of the Minist. of Educ., Southeast Univ., Nanjing, China
Volume
49
Issue
7
fYear
2013
fDate
March 28 2013
Firstpage
488
Lastpage
490
Abstract
A high-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of - 70 to 40-C.
Keywords
CMOS integrated circuits; capacitive sensors; graphene; sensitivity; silicon; temperature sensors; GO; Si; bulk silicon interdigital capacitive temperature sensor; graphene oxide; high-performance bulk silicon interdigital capacitive temperature sensor; sensing material; temperature -70 degC to 40 degC; typical CMOS integrated temperature sensors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.4141
Filename
6504980
Link To Document