DocumentCode
2921543
Title
From Oxymoron to Mainstream: The Evolution and Future of RF CMOS
Author
Lee, Thomas H.
Author_Institution
Stanford Univ., Stanford
fYear
2007
fDate
9-11 Dec. 2007
Firstpage
1
Lastpage
6
Abstract
Well into the latter half of the 1990s, few experts believed that CMOS would ever become a credible RF technology. A scant decade later, CMOS dominates in many RF applications below 10 GHz. Recent developments show credible performance at millimeter-wave frequencies, and continued scaling promises near-THz operation within a decade. This paper tracks key milestones in the evolution of RF CMOS to identify broad themes that permit plausible speculation about possible futures.
Keywords
CMOS integrated circuits; radiofrequency integrated circuits; RF CMOS; millimeter-wave frequencies; terahertz electronics; CMOS technology; Circuit noise; Low-frequency noise; Low-noise amplifiers; MOSFETs; Millimeter wave technology; Oscillators; Radio frequency; Radiofrequency identification; Superconducting device noise; ESD; RF CMOS; low-noise amplifier; millimeter-wave; oscillator phase noise; terahertz electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology, 2007. RFIT 007. IEEE International Workshop on
Conference_Location
Rasa Sentosa Resort
Print_ISBN
978-1-4244-1307-2
Electronic_ISBN
978-1-4244-1308-9
Type
conf
DOI
10.1109/RFIT.2007.4443905
Filename
4443905
Link To Document