0.18um CMOS Low-Noise Amplifier with two 2nd-order notch filters for Ultra-Wideband Wireless Receiver

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, two 2^nd-order notch filters and an output buffer for measurement purpose. It is simulated in TSMC 0.18 mum standard RF CMOS process. The LNA gives 13.1 dB maximum power gain between 3.0 GHz-4.9 GHz and 15.5 dB maximum power gain between 6.2 GHz-10.2 GHz while consuming 21.9 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.2 GHz-10.2 GHz, a minimum noise figure is 2.5 dB and 2.8 dB. Input return loss lower than -6.4dB in all bandwidth have been achieved.