Title :
A novel low power 64-kb SRAM using bit-lines charge-recycling and non-uniform cell scheme
Author :
Wang, Xu ; Jiang, Jianfei ; Mao, Zhigang ; Ge, Bingjing ; Zhao, Xinglong
Author_Institution :
Sch. of Microelectron., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
For a conventional SRAM, bit-lines dissipate the largest part of power consumption, since they are long lines with parasitical capacitance. Furthermore, the bit-lines consume more power in write cycle than in read cycle. A new charge-recycling method is proposed to reduce bit-line power consumption. The proposed SRAM pre-charge the bit-lines to VDD or GND respectively, they share the charge of adjacent bit-lines in write cycle. This is different from the former charge-recycling technique, because it does not need the additional voltage supply except VDD. SRAM cells also dissipate a lot of leakage power consumption in inactive cycle. The proposed SRAM uses non uniform cell method to reduce gate leakage. In this paper, a 64kb (4k*16bits) 1-port SRAM is implemented with 100nm CMOS technology, the simulation results show that it reduces 32.9% leakage for SRAM cell in inactive mode, and 22% total power consumption to the conventional SRAM.
Keywords :
CMOS integrated circuits; SRAM chips; power consumption; CMOS technology; bit-lines charge-recycling; charge-recycling method; leakage power consumption; low power SRAM; nonuniform cell scheme; size 100 nm; voltage supply; Computer architecture; Logic gates; Power demand; Random access memory; Recycling; Switches; Transistors;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2011 18th IEEE International Conference on
Conference_Location :
Beirut
Print_ISBN :
978-1-4577-1845-8
Electronic_ISBN :
978-1-4577-1844-1
DOI :
10.1109/ICECS.2011.6122329