[Front cover]

fYear

2008

fDate

12-16 Oct. 2008

Abstract

The following topics are dealt with: NBTI (negative bias temperature instability); back-end reliability; reliability of low-k dielectrics and interconnects; reliability of sensors/memories; high-k reliability; reliability of compound materials and devices such as MOSFETs and HBTs; fWLR reliability (fast wafer level reliability); ESD-CDM microelectronic testing; thermal fatigue life; reliability simulation; CMOS design.

Keywords

CMOS integrated circuits; MOSFET; digital storage; electrostatic discharge; heterojunction bipolar transistors; high-k dielectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; low-k dielectric thin films; semiconductor device reliability; sensors; thermal stress cracking; wafer level packaging; CMOS design; ESD-CDM microelectronic testing; HBT reliability; MOSFET reliability; NBTI; back-end reliability; compound materials; fWLR reliability; fast wafer level reliability; high-k reliability; integrated circuit reliability; low-k dielectrics; low-k interconnects; memory device reliability; negative bias temperature instability; reliability simulation; sensor reliability; thermal fatigue life;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-2194-7

Type

conf

DOI

10.1109/IRWS.2008.4796061

Filename

4796061