DocumentCode
2921835
Title
An ultra low-voltage, ultra low-power DTMOS-based CCII design for speech processing filters
Author
Uygur, A. ; Kuntman, Hakan
Author_Institution
Dept. of Electron. & Telecommun. Eng., ITU Ayazaga Campus, Istanbul, Turkey
fYear
2013
fDate
28-30 Nov. 2013
Firstpage
31
Lastpage
35
Abstract
In this study, an ultra low-voltage, ultra low-power dynamic threshold voltage MOS transistor (DTMOS)-based CCII design has been presented. The proposed circuit operates under ±0.2 V symmetric power supply. Consisting of only eight transistors, it consumes only 214 nW power while all transistors are working in the subthreshold region. It has a 570 kHz 3 dB-bandwidth from X terminal to Y terminal for the voltage gain. TSMC 0.18 μm process technology is used in the design of CCII block which is then employed in a band-pass filter configuration. In order to further investigate its performance, real speech signals are fed to the filter and close agreement is found between theoretical study and simulated responses.
Keywords
MOSFET; band-pass filters; speech processing; CCII design; MOS transistors; bandpass filter configuration; speech processing filters; speech signals; symmetric power supply; ultra low power DTMOS; ultra low-voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Electronics Engineering (ELECO), 2013 8th International Conference on
Conference_Location
Bursa
Print_ISBN
978-605-01-0504-9
Type
conf
DOI
10.1109/ELECO.2013.6713930
Filename
6713930
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