DocumentCode :
2921835
Title :
An ultra low-voltage, ultra low-power DTMOS-based CCII design for speech processing filters
Author :
Uygur, A. ; Kuntman, Hakan
Author_Institution :
Dept. of Electron. & Telecommun. Eng., ITU Ayazaga Campus, Istanbul, Turkey
fYear :
2013
fDate :
28-30 Nov. 2013
Firstpage :
31
Lastpage :
35
Abstract :
In this study, an ultra low-voltage, ultra low-power dynamic threshold voltage MOS transistor (DTMOS)-based CCII design has been presented. The proposed circuit operates under ±0.2 V symmetric power supply. Consisting of only eight transistors, it consumes only 214 nW power while all transistors are working in the subthreshold region. It has a 570 kHz 3 dB-bandwidth from X terminal to Y terminal for the voltage gain. TSMC 0.18 μm process technology is used in the design of CCII block which is then employed in a band-pass filter configuration. In order to further investigate its performance, real speech signals are fed to the filter and close agreement is found between theoretical study and simulated responses.
Keywords :
MOSFET; band-pass filters; speech processing; CCII design; MOS transistors; bandpass filter configuration; speech processing filters; speech signals; symmetric power supply; ultra low power DTMOS; ultra low-voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineering (ELECO), 2013 8th International Conference on
Conference_Location :
Bursa
Print_ISBN :
978-605-01-0504-9
Type :
conf
DOI :
10.1109/ELECO.2013.6713930
Filename :
6713930
Link To Document :
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