Title :
A key for realizing p-type ZnO
Author :
Kawasaki, Masashi
Author_Institution :
Institute for Materials Research (IMR) Tohoku University; Combinatorial Materials Exploration and Technology (COMET), NIMS, Japan; kawasaki@imr.tohoku.ac.jp
Abstract :
Doping of nitrogen into high crystallinity ZnO epitaxial film is shown to provide with p-type conduction. We employ a temporal combination of high temperature process pursuing high crystallinity and low temperature process facilitating incorporation of nitrogen.
Keywords :
Crystallization; Gallium nitride; Lattices; Light emitting diodes; Liquid crystal displays; Liquid crystals; Nitrogen; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569476
