DocumentCode
2921890
Title
A key for realizing p-type ZnO
Author
Kawasaki, Masashi
Author_Institution
Institute for Materials Research (IMR) Tohoku University; Combinatorial Materials Exploration and Technology (COMET), NIMS, Japan; kawasaki@imr.tohoku.ac.jp
fYear
2005
fDate
30-02 Aug. 2005
Firstpage
464
Lastpage
465
Abstract
Doping of nitrogen into high crystallinity ZnO epitaxial film is shown to provide with p-type conduction. We employ a temporal combination of high temperature process pursuing high crystallinity and low temperature process facilitating incorporation of nitrogen.
Keywords
Crystallization; Gallium nitride; Lattices; Light emitting diodes; Liquid crystal displays; Liquid crystals; Nitrogen; Substrates; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN
0-7803-9242-6
Type
conf
DOI
10.1109/CLEOPR.2005.1569476
Filename
1569476
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