Title :
Development of design rules for reliable tungsten plugs using simulations
Author :
IslamRaja, M.Mazhar ; Bariya, A.J. ; Saraswat, K.C. ; Cappelli, M.A. ; McVittie, J.P. ; Moberly, L. ; Lahri, R.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
fDate :
March 31 1992-April 2 1992
Abstract :
Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the design rules for this process. The use of computer simulations greatly reduces the number of experiments required to develop a process or to establish design rules. The design rules ensure that the via plugs are void free and that they do not form a severe topography during the etch-back.<>
Keywords :
CMOS integrated circuits; integrated circuit technology; metallisation; reliability; semiconductor process modelling; tungsten; 0.8 micron; CMOS technology; blanket deposition; computer simulations; deposition profiles; design rules; etch-back; reliable W via plugs; sidewall slope; void formation; CMOS technology; Computational modeling; Computer simulation; Dielectric losses; Etching; Fabrication; Mechanical engineering; Plugs; Surfaces; Tungsten;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187614